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Phosphorous Doped Silicon by Neutron Radiation
N-type phosphorous doped Silicon by neutron radiation was invented by Topsil in 1974. In this NTD (neutron transmutation doping) process, Silicon atoms are transformed into phosphorous atoms.
By adjusting the level of neutron radiation, material resistivity can be altered without introducing external dopants and therefore guaranteeing material purity. This NTD type Float Zone Silicon is available in <1-1-1> and <1-0-0> orientations up to 150mm diameter ingots and wafers.
Sample Listing of Polished NTD Silicon From stock
| 3 in. Diameter polished one side |
| Lot # |
Resistivity ohm-cm |
Thickness micron |
Quantity |
| 2792-111-N |
28-47 |
279 |
90 |
| 2793-111-N |
28-44 |
279 |
21 |
| 6001-111-N |
135-165 |
600 |
150 |
| 100 mm diameter polished one side |
| 5002-111-N |
94-116 |
500 |
185 |
| 7302-111-N |
180-220 |
730 |
250 |
| 7502-111-N |
500-600 |
750 |
483 |
Please note: this is a sample listing of wafers in stock. We have several thousand kilograms of Silicon in various forms for fast delivery.
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